d a t a sh eet product speci?cation supersedes data of september 1994 file under discrete semiconductors, sc04 1996 dec 09 discrete semiconductors BF857; bf858; bf859 npn high-voltage transistors m3d067
1996 dec 09 2 philips semiconductors product speci?cation npn high-voltage transistors BF857; bf858; bf859 description npn transistors in a to-202 plastic package. an a-version with e-b-c pinning instead of e-c-b is available on request. applications for use in video output stages of black and white and colour television receivers. pinning pin description 1 emitter 2 collector, connected to mounting base 3 base fig.1 simplified outline (to-202) and symbol. handbook, halfpage 123 mbh794 quick reference data symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter BF857 - 160 v bf858 - 250 v bf859 - 300 v v ceo collector-emitter voltage open base BF857 - 160 v bf858 - 250 v bf859 - 300 v i cm peak collector current - 300 ma p tot total power dissipation t mb 75 c - 6w h fe dc current gain i c = 30 ma; v ce =10v 26 - c re feedback capacitance i c =i c = 0; v ce = 30 v; f = 1 mhz - 3pf f t transition frequency i c = 15 ma; v ce = 10 v; f = 100 mhz 90 - mhz
1996 dec 09 3 philips semiconductors product speci?cation npn high-voltage transistors BF857; bf858; bf859 limiting values in accordance with the absolute maximum rating system (iec 134). thermal characteristics characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter BF857 - 160 v bf858 - 250 v bf859 - 300 v v ceo collector-emitter voltage open base BF857 - 160 v bf858 - 250 v bf859 - 300 v v ebo emitter-base voltage open collector - 5v i c collector current (dc) - 100 ma i cm peak collector current - 300 ma i bm peak base current - 100 ma p tot total power dissipation t amb 25 c - 2w t mb 75 c - 6w t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb operating ambient temperature - 65 +150 c symbol parameter value unit r th j-a thermal resistance from junction to ambient 62.5 k/w r th j-mb thermal resistance from junction to mounting base 12.5 k/w symbol parameter conditions min. max. unit i cbo collector cut-off current i e = 0; v cb = 100 v BF857 - 0.1 m a i cbo collector cut-off current i e = 0; v cb = 200 v bf858 - 0.1 m a i cbo collector cut-off current i e = 0; v cb = 250 v bf859 - 0.1 m a i ebo emitter cut-off current i c = 0; v eb =5v - 100 na h fe dc current gain i c = 30 ma; v ce =10v 26 - v cesat collector-emitter saturation voltage i c = 30 ma; i b = 6 ma - 1v c re feedback capacitance i c =i c = 0; v ce =30v; f=1mhz - 3pf f t transition frequency i c = 15 ma; v ce = 10 v; f = 100 mhz 90 - mhz
1996 dec 09 4 philips semiconductors product speci?cation npn high-voltage transistors BF857; bf858; bf859 package outline fig.2 to-202. dimensions in mm. (1) terminal dimensions within this zone are uncontrolled. handbook, full pagewidth 10.4 max 3.8
3.6 12.2
min 10 123 8.6
max 4.6
max 0.8 (3x) 2.54 2.54 2.5 max (1) 2.4 max 3.8 24.2
max 0.65 max 0.56 max 1.6 0.6 mga322
1996 dec 09 5 philips semiconductors product speci?cation npn high-voltage transistors BF857; bf858; bf859 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1996 dec 09 6 philips semiconductors product speci?cation npn high-voltage transistors BF857; bf858; bf859 notes
1996 dec 09 7 philips semiconductors product speci?cation npn high-voltage transistors BF857; bf858; bf859 notes
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